SS8550W [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | SS8550W |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550W
FEATURES
Pb
Lead-free
z
z
z
Collector Current.(IC= 1.5A）
Complementary To SS8550W.
Collector Dissipation: PC=0.2W (TC=25°C)
APPLICATIONS
z
High Collector Current.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Y2
Package Code
SOT-323
SS8550W
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-1.5
0.2
A
PC
W
℃
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTF062
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-100μA,IE=0
-40
V
V
V
V(BR)CEO
V(BR)EBO
IC=-0.1mA,IB=0
-25
-5
IE=-100μA,IC=0
ICBO
ICEO
IEBO
VCB=-40V,IE=0
VCE=-20V,IB=0
VEB=-5V,IC=0
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
Emitter cut-off current
VCE=-1V,IC=-100mA
VCE=-1V,IC=-800mA
120
40
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=-800mA, IB= -80mA
IC=-800mA, IB= -80mA
VCE(sat)
VBE(sat)
-0.5
-1.2
V
V
VCE=-10V, IC= -50mA
f=30MHz
Transition frequency
fT
100
MHz
Output capacitance
Base-emitter voltage
VCB=-10V,IE=0,f=1MHz
IE=-1.5A
Cob
20
pF
V
VBEF
-1.6
CLASSIFICATION OF hFE(1)
Rank
L
H
J
Range
120-200
200-350
300-400
Document number: BL/SSSTF062
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550W
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF062
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550W
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
A
Min
1.8
Max
2.2
B
1.15
1.35
C
D
E
1.0Typical
0.15
0.25
1.2
0.35
0.40
1.4
G
H
J
0.02
0.1
0.1Typical
K
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
SOT-323
Shipping
SS8550W
3000/Tape&Reel
Document number: BL/SSSTF062
Rev.A
www.galaxycn.com
4
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